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External magnetic field effect on the sheath dynamics and implantation profiles in the vicinity of a long step shaped target in plasma immersion ion implantation

This work investigates the sheath dynamics and implantation profiles during the plasma immersion ion implantation (PIII) process on a long step shaped target in the presence of a DC magnetic field with the different inclination angles. The fluid model is used to demonstrate the time evolution of the...

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Bibliographic Details
Published in:Vacuum 2014-03, Vol.101, p.354-359
Main Authors: Navab Safa, Nasrin, Ghomi, Hamid, Khoramabadi, Mansour, Ghasemi, Saeed, Niknam, Ali Reza
Format: Article
Language:English
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Summary:This work investigates the sheath dynamics and implantation profiles during the plasma immersion ion implantation (PIII) process on a long step shaped target in the presence of a DC magnetic field with the different inclination angles. The fluid model is used to demonstrate the time evolution of the sheath parameters and the influence of the magnetic field on these parameters. The results of the numerical solution of the equations show that, the magnetic field inclination angle strongly affects the ion-implanted dose in the different faces of the step shaped target. According to the results, the vertical sidewall of the target is only implanted when the magnetic field inclination angle is 30°. Whereas, at the magnetic field inclination angles of 70° and 80° the horizontal parts of the target can be implanted selectively. Furthermore, the implantation profiles can be well explained using the ions energy and incident angle. •We study effect of magnetic field on implantation profile on a step shaped target.•Fluid model is used to demonstrate the time evolution of the sheath.•Vertical face of target is only implanted at 30° magnetic field inclination angle.•At 70° and 80° magnetic field inclination angles, horizontal parts are implanted.•Ion energy and incident angle evolution is used to describe implantation profiles.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2013.10.013