Loading…
External magnetic field effect on the sheath dynamics and implantation profiles in the vicinity of a long step shaped target in plasma immersion ion implantation
This work investigates the sheath dynamics and implantation profiles during the plasma immersion ion implantation (PIII) process on a long step shaped target in the presence of a DC magnetic field with the different inclination angles. The fluid model is used to demonstrate the time evolution of the...
Saved in:
Published in: | Vacuum 2014-03, Vol.101, p.354-359 |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | This work investigates the sheath dynamics and implantation profiles during the plasma immersion ion implantation (PIII) process on a long step shaped target in the presence of a DC magnetic field with the different inclination angles. The fluid model is used to demonstrate the time evolution of the sheath parameters and the influence of the magnetic field on these parameters. The results of the numerical solution of the equations show that, the magnetic field inclination angle strongly affects the ion-implanted dose in the different faces of the step shaped target. According to the results, the vertical sidewall of the target is only implanted when the magnetic field inclination angle is 30°. Whereas, at the magnetic field inclination angles of 70° and 80° the horizontal parts of the target can be implanted selectively. Furthermore, the implantation profiles can be well explained using the ions energy and incident angle.
•We study effect of magnetic field on implantation profile on a step shaped target.•Fluid model is used to demonstrate the time evolution of the sheath.•Vertical face of target is only implanted at 30° magnetic field inclination angle.•At 70° and 80° magnetic field inclination angles, horizontal parts are implanted.•Ion energy and incident angle evolution is used to describe implantation profiles. |
---|---|
ISSN: | 0042-207X 1879-2715 |
DOI: | 10.1016/j.vacuum.2013.10.013 |