Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure

In this study, we report a resistive random access memory (RRAM) using trilayer SiOx/a-Si/TiOy film structure. The low switching energy of

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Bibliographic Details
Published in:Current applied physics 2014-01, Vol.14 (1), p.139-143
Main Authors: Cheng, Chun-Hu, Chou, K.I., Zheng, Zhi-Wei, Hsu, Hsiao-Hsuan
Format: Article
Language:English
Subjects:
Current distribution
Cycles
Durability
Endurance
Random access memory
Resistive random access memory (RRAM)
Silicon dioxide
SiO2
Stacks
Switching
TiO2
Titanium dioxide
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Description
Summary:In this study, we report a resistive random access memory (RRAM) using trilayer SiOx/a-Si/TiOy film structure. The low switching energy of
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2013.10.019