Differentiated space allocation for wear leveling on phase-change memory-based storage device

Phase-change memory (PCM) is the best candidate for the storage device of next-generation mobile consumer electronics. PCM has the potential to replace NAND flash memory, due to its non-volatility, in-place programmability, and low power consumption. Even though the lifetime of PCM is longer than th...

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Bibliographic Details
Published in:IEEE transactions on consumer electronics 2014-02, Vol.60 (1), p.45-51
Main Authors: Im, Soojun, Shin, Dongkun
Format: Article
Language:English
Subjects:
Algorithms
Benchmark testing
Counting
Devices
Electronics
File systems
Flash memories
Flash memory (computers)
Leveling
Memory management
Non-Volatile Memory
Phase change materials
Phase Change Memory
Random access memory
Resource management
Storage Class Memory
Wear
Wear-Leveling
Workload
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Summary:Phase-change memory (PCM) is the best candidate for the storage device of next-generation mobile consumer electronics. PCM has the potential to replace NAND flash memory, due to its non-volatility, in-place programmability, and low power consumption. Even though the lifetime of PCM is longer than that of flash memory, wear leveling is still required to cope with the non-uniformity of storage workload or malicious attack. In this paper, a novel wear-leveling algorithm for PCM storage is proposed, where more physical pages are allocated to frequently updated logical pages, to balance the wear counts of PCM cells. In comparison with the previous techniques, the proposed algorithm improved the lifetime of PCM by at maximum 14 times and on average 8 times 1 .
ISSN:0098-3063
1558-4127
DOI:10.1109/TCE.2014.6780924