Fabrication of a bulk silicon p–n homojunction-structured light-emitting diode showing visible electroluminescence at room temperature

We have developed a novel dressed-photon-assisted annealing process, in which the distribution of dopant (boron) domains is modified in a self-organized manner based on the absorption of light having a photon energy higher than the band gap and subsequent stimulated emission. Using this process, we...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2014-04, Vol.115 (1), p.105-111
Main Authors: Tran, Minh Anh, Kawazoe, Tadashi, Ohtsu, Motoichi
Format: Article
Language:English
Subjects:
Broadband
Characterization and Evaluation of Materials
Condensed Matter Physics
Dopants
Electroluminescence
Emission
Invited Paper
Light-emitting diodes
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Photons
Physics
Physics and Astronomy
Processes
Silicon
Stimulated emission
Surfaces and Interfaces
Thin Films
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Summary:We have developed a novel dressed-photon-assisted annealing process, in which the distribution of dopant (boron) domains is modified in a self-organized manner based on the absorption of light having a photon energy higher than the band gap and subsequent stimulated emission. Using this process, we were able to fabricate a bulk silicon p–n homojunction-structured light-emitting diode that showed electroluminescence emission in the visible region at room temperature. A broadband spectrum with three emission peaks at 400 nm, 590 nm, and 620 nm was clearly observed.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-013-7907-9