Thermal and electrical investigation of the reverse bias degradation of silicon solar cells

This work presents a detailed analysis of the degradation of Si-based solar cells submitted to reverse-bias stress; the study is based on electrical, electro-optical and thermal measurements, carried out at the different stages of the stress tests. The results show that exposure to reverse bias may...

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Bibliographic Details
Published in:Microelectronics and reliability 2013-09, Vol.53 (9-11), p.1809-1813
Main Authors: Compagnin, Alessandro, Meneghini, Matteo, Barbato, Marco, Giliberto, Valentina, Cester, Andrea, Vanzi, Massimo, Mura, Giovanna, Zanoni, Enrico, Meneghesso, Gaudenzio
Format: Article
Language:English
Subjects:
Applied sciences
Bias
Degradation
Electronics
Energy
Exact sciences and technology
Imaging devices
Infrared
Natural energy
Optoelectronic devices
Photovoltaic cells
Photovoltaic conversion
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Stresses
Thermal imaging
Thermal measurements
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Summary:This work presents a detailed analysis of the degradation of Si-based solar cells submitted to reverse-bias stress; the study is based on electrical, electro-optical and thermal measurements, carried out at the different stages of the stress tests. The results show that exposure to reverse bias may induce severe modifications of the cell electro-optical performance: the most relevant failure mechanism is the increase in localized shunt resistance components. The changes in the leakage paths have been investigated both through infrared thermal imaging and SEM measurements.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2013.07.013