Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells

We have successfully grown a-axis-oriented p-type BaSi2 films on Si(111) by in situ boron (B) doping using molecular beam epitaxy (MBE). The hole concentration in B-doped BaSi2 was controlled in the range between 1017 and 1019cm−3 at room temperature by changing the temperature of the B Knudsen cell...

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Bibliographic Details
Published in:Journal of crystal growth 2013-09, Vol.378, p.201-204
Main Authors: Ajmal Khan, M., Hara, Kosuke O., Nakamura, Kotaro, Du, Weijie, Baba, Masakazu, Toh, Katsuaki, Suzuno, Mitsushi, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi
Format: Article
Language:English
Subjects:
A1. Impurity doping
A3. MBE
Applied sciences
B1. Semiconducting silicides
B2. BaSi2
B3. Solar cell
Barium compounds
Boron
Cross-disciplinary physics: materials science
rheology
Crystal growth
Disilicides
Energy
Epitaxy
Exact sciences and technology
Intermetallics
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Natural energy
Photovoltaic conversion
Physics
Semiconductors
Solar cells. Photoelectrochemical cells
Solar energy
Thin films
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Summary:We have successfully grown a-axis-oriented p-type BaSi2 films on Si(111) by in situ boron (B) doping using molecular beam epitaxy (MBE). The hole concentration in B-doped BaSi2 was controlled in the range between 1017 and 1019cm−3 at room temperature by changing the temperature of the B Knudsen cell crucible. The acceptor level was estimated to be approximately 23meV. ► B-doped BaSi2 films were grown by molecular beam epitaxy. ► B-doped BaSi2 showed p-type conductivity. ► The hole concentration was controlled in the range between 1017 and 1019cm−3. ► The acceptor level was approximately 23meV.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2012.12.153