Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors

The electrical stability of amorphous InGaZnO (a-IGZO) TFTs with three different channel layers was investigated. Compared with the single channel layer, the a-IGZO TFT with double stacked channel layer showed the lowest threshold voltage shift with slightly change in field effect mobility and sub-t...

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Bibliographic Details
Published in:Microelectronics and reliability 2013-12, Vol.53 (12), p.1879-1885
Main Authors: Zhan, Runze, Dong, Chengyuan, Liu, Po-Tsun, Shieh, Han-Ping D.
Format: Article
Language:English
Subjects:
Applied sciences
Bias
Channels
Electronics
Exact sciences and technology
Passivation
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stability
Stresses
Thin film transistors
Thin films
Transistors
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Summary:The electrical stability of amorphous InGaZnO (a-IGZO) TFTs with three different channel layers was investigated. Compared with the single channel layer, the a-IGZO TFT with double stacked channel layer showed the lowest threshold voltage shift with slightly change in field effect mobility and sub-threshold swing under positive and negative gate bias stress tests. Moreover, sputtered SiNx thin film was served as passivation layer where the Vth shift in bias stress effect evidently became less. It was found that the passivated a-IGZO TFT with double stacked channel layer still exhibited the best stability. The results prove that the stability of a-IGZO TFTs can be effectively improved by using double stacked channel layer and passivation layer.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2013.05.007