Characterization of an Au/n-Si photovoltaic structure with an organic thin film

• Published in: Materials science in semiconductor processing 2013-08, Vol.16 (4), p.1125-1130
• Main Authors: Özaydın, C., Akkılıç, K., İlhan, S., Rüzgar, Ş., Güllü, Ö., Temel, H.
• Format: Article
• Language: English
• Subjects: Applied sciences; Barriers; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Devices; DIODES; Electron states; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals; Electronics; Exact sciences and technology; Gold; INTERFACES; Methods of electronic structure calculations; ORGANIC COMPOUNDS; Organics; Photovoltaic cells; Physics; Schottky barrier; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SEMICONDUCTORS; Solar cells; Surface double layers, schottky barriers, and work functions; Surfaces and interfaces; THIN FILMS; Unity; VOLTAGE
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2013.03.002

We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal–semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Φb of the diode were 2.22 and 0.736eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current–voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde’s method were 6.7 kΩ and 0.77eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24V and a short circuit current of 1.7 μA under light of 8mW/cm2.