Si purification by enrichment of primary Si in Al-Si melt

The primary silicon crystals and Al-Si alloy in hypereutectic Al-Si melt were separated by electromagnetic stirring and directional solidification. Additionally, the distribution feature of impurities in Al-Si system was verified. The results show that the impurities are mainly located in Al-Si allo...

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Bibliographic Details
Published in:Transactions of Nonferrous Metals Society of China 2013-11, Vol.23 (11), p.3476-3481
Main Authors: YU, Wen-zhou, MA, Wen-hui, LÜ, Guo-qiang, REN, Yong-sheng, XUE, Hai-yang, DAI, Yong-nian
Format: Article
Language:English
Subjects:
Al-Si alloy
Aluminum
Aluminum base alloys
Crystals
directional solidification
electromagnetic stirring
Grain boundaries
Impurities
impurity
Intermetallic compounds
Melts
primary silicon
Purification
Silicon
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Summary:The primary silicon crystals and Al-Si alloy in hypereutectic Al-Si melt were separated by electromagnetic stirring and directional solidification. Additionally, the distribution feature of impurities in Al-Si system was verified. The results show that the impurities are mainly located in Al-Si alloy and the grain boundaries between the Al-Si alloy and primary silicon. Furthermore, the morphology of primary silicon changes from fish-bone like to plate like and spheroid due to the different Si contents. The amount of impurities decreases with the increasing of Si content in different positions of the sample. The amount of impurities in the bottom of the sample is approximately 10×10−6, which is obviously improved compared with the 1248.47×10−6 in metallurgical Si.
ISSN:1003-6326
DOI:10.1016/S1003-6326(13)62891-5