Synthesis of SiGe layered structure in single crystalline Ge substrate by low energy Si ion implantation

Nanometer-thickness SiGe alloy layers were synthesized by direct Si ion implantation in Ge (100) wafers at different fluences followed by high temperature annealing. The cross-sectional transmission electron microscopy and secondary ion mass spectrometry reveal the formation of a thin Si-rich crysta...

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Bibliographic Details
Published in:Vacuum 2014-03, Vol.101, p.387-393
Main Authors: Mollick, S.A., Ghose, D., Bhattacharyya, S.R., Bhunia, S., Ray, N.R., Ranjan, M.
Format: Article
Language:English
Subjects:
Annealing
Crystal structure
Germanium
Ion implantation
Low energy
Raman spectroscopy
Secondary ion mass spectrometry
SiGe
Silicon germanides
Silicon substrates
TEM
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Summary:Nanometer-thickness SiGe alloy layers were synthesized by direct Si ion implantation in Ge (100) wafers at different fluences followed by high temperature annealing. The cross-sectional transmission electron microscopy and secondary ion mass spectrometry reveal the formation of a thin Si-rich crystalline layer in the near-surface region. The micro-Raman spectroscopy and X-ray reflectivity techniques were used to determine the composition and strain in SiGe alloy layers. The photoluminescence measurements of the annealed samples showed a broad emission, peaking around 500 nm. The peak intensity is, however, dependent on the bombarding fluence. •SiGe alloy layer was synthesized by direct Si ion implantation in Ge (100) wafers followed by rapid thermal annealing.•The characterization of the alloy was done by several analytical techniques: TEM, SIMS, Raman, XRR and PL.•The results show the formation of surface Si-rich and Ge-rich monocrystalline layers.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2013.10.016