Analyses for various doping structures of SOI-based optical phase modulator using free carrier dispersion effect

This paper highlights the study on various structure of silicon-on-insulator (SOI) optical phase modulators based on free carrier dispersion effect. The proposed modulators employ the forward biased P-I-N diode structure integrated in the waveguide and will be working at 1.55μm optical telecommunica...

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Bibliographic Details
Published in:Optik (Stuttgart) 2014-03, Vol.125 (6), p.1800-1803
Main Authors: Mardiana, B., Shaari, Sahbudin, Menon, P. Susthitha, Hazura, H., Hanim, A.R., Arsad, N., Abdullah, H.
Format: Article
Language:English
Subjects:
Diodes
Dispersions
Doping
Mathematical models
Modulation
Modulators
Packages
Three dimensional
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Summary:This paper highlights the study on various structure of silicon-on-insulator (SOI) optical phase modulators based on free carrier dispersion effect. The proposed modulators employ the forward biased P-I-N diode structure integrated in the waveguide and will be working at 1.55μm optical telecommunications wavelength. Three kinds of structure are compared systematically where the p+ and n+ doping positions are varied. The modeling and characterization of the SOI phase modulators was carried out by 3D numerical simulation package. Our results show that the position of doping regions have a great influences to the device performance. It was discovered that the best structure in this work demonstrated modulation efficiency of 0.015Vcm with a length of 155μm.
ISSN:0030-4026
1618-1336
DOI:10.1016/j.ijleo.2013.09.050