Simulation analysis of the aluminum thin film thickness measurement by using low energy electron beam

This paper indicates a simulation analysis for estimating the aluminum (Al) thin film thickness measurements by using the low energy electron beam. In order to calculate the Al thickness estimation, the energy of the incident electron beams was varied from 10 to 30keV, while the thickness of the Al...

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Bibliographic Details
Published in:Optik (Stuttgart) 2014-01, Vol.125 (1), p.71-74
Main Authors: Movla, Hossein, Babazadeh, Mohammad
Format: Article
Language:English
Subjects:
Aluminum
CASINO
Computer simulation
Electron beams
Low energy
Low energy beam
Mathematical analysis
Monte Carlo simulation
Simulation
Thickness estimation
Thickness measurements
Thin film
Thin films
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Summary:This paper indicates a simulation analysis for estimating the aluminum (Al) thin film thickness measurements by using the low energy electron beam. In order to calculate the Al thickness estimation, the energy of the incident electron beams was varied from 10 to 30keV, while the thickness of the Al film was varied between 6 and 14μm. From the simulation results it was found that electron transmittance fraction in 14μm sample is about nine orders of magnitude more than 6μm sample at the same incident electron beam energy. Simulation results show that maximum transmitted electrons versus Al layer thickness has a parabolic relation and by using the obtained equation, it is possible to estimate unknown thickness of the thin film Al layer. All calculations here were done by CASINO numerical simulation package.
ISSN:0030-4026
1618-1336
DOI:10.1016/j.ijleo.2013.06.033