Analysis of displacement damage effects on MOS capacitors

Displacement damage effect on MOS capacitors is analyzed in this work with the aid of TCAD simulations. A noticeable capacitance reduction in the accumulation mode is observed in the High Frequency C–V characteristic curve after a 24GeV proton irradiation. This effect is clearly distinguishable from...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2013-12, Vol.730, p.91-94
Main Authors: Fernández-Martínez, P., Palomo, F.R., Hidalgo, S., Fleta, C., Campabadal, F., Flores, D.
Format: Article
Language:English
Subjects:
Capacitance
Capacitors
Damage
Detectors
Displacement
Displacement damage defects
Displacement damage simulation
Metal oxide semiconductors
MOS capacitor
Proton irradiation
Reduction
Spectrometers
TCAD simulations
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Summary:Displacement damage effect on MOS capacitors is analyzed in this work with the aid of TCAD simulations. A noticeable capacitance reduction in the accumulation mode is observed in the High Frequency C–V characteristic curve after a 24GeV proton irradiation. This effect is clearly distinguishable from ionizing damage effects, otherwise negligible under the specific conditions of the experiment. The capacitance reduction is identified with the increase of the substrate resistivity, due to the modification of its effective doping concentration. Supported on a well-established traps model, the expected displacement damage defects are simulated as a function of the fluence, allowing the identification of donor trap levels as the responsible of the phenomenon for p-type substrate MOS capacitors.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2013.05.108