Novel BCD Process Platform with Integrated Self-Extracted JTE Trench Technology for EL Drivers ICs

A low cost silicon BCD technology in place of high cost SOI BCD technology for monolithic integrated EL driver ICs application is put forward. Several key technologies are presented. An advanced SEJTET termination technology was designed instead of the conventional PIOS isolation to obtain smaller c...

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Bibliographic Details
Published in:Journal of nanomaterials 2014-01, Vol.2014 (2014), p.1-5
Main Authors: Li, Haiou, Yu, Zongguang, Hu, Nanzhong, Huang, Wei
Format: Article
Language:English
Subjects:
Compatibility
Devices
Load
Low cost
Nanomaterials
Platforms
Pulse duration modulation
Science
Semiconductors
Silicon
Utilization
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Description
Summary:A low cost silicon BCD technology in place of high cost SOI BCD technology for monolithic integrated EL driver ICs application is put forward. Several key technologies are presented. An advanced SEJTET termination technology was designed instead of the conventional PIOS isolation to obtain smaller chip area and protect HVICs from the occurrence of di/dt effect under PWM operation. Novel VDMOS/Resurf LDPMOS devices were developed compatibly to obtain the lowest R on , sp , improve silicon utilization, and simplify key process steps.
ISSN:1687-4110
1687-4129
DOI:10.1155/2014/203963