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Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors

Precise measurements of a complete set of thermoelectric parameters on a single indium-arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle. The devices were fabricated as micro electro-mechanical systems consisting...

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Bibliographic Details
Published in:Nanotechnology 2014-08, Vol.25 (30), p.305702-9
Main Authors: Karg, S F, Troncale, V, Drechsler, U, Mensch, P, Das Kanungo, P, Schmid, H, Schmidt, V, Gignac, L, Riel, H, Gotsmann, B
Format: Article
Language:English
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Summary:Precise measurements of a complete set of thermoelectric parameters on a single indium-arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle. The devices were fabricated as micro electro-mechanical systems consisting of silicon nitride membranes structured with resistive gold heaters/sensors. Preparation, operation and characterization of the devices are described in detail. Thermal decoupling of the heater/sensor platforms has been optimized reaching thermal conductances as low as with a measurements sensitivity below . The InAs NWs were characterized in terms of thermal conductance, four-probe electrical conductance and thermopower (Seebeck coefficient), all measured on a single NW. The temperature dependence  of the parameters determining the thermoelectric figure-of-merit of an InAs NW was acquired in the range 200-350 K featuring a minor decrease of the thermal conductivity from 2.7 W to 2.3 W .
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/25/30/305702