A 2D sub-threshold current model for single halo triple material surrounding gate (SHTMSG) MOSFETs

In the proposed work analytical modeling of single halo triple material surrounding gate (SH-TMSG) MOSFET is developed. The threshold voltage and subthreshold current has been derived using parabolic approximation method and the simulation results are analyzed. The threshold voltage roll off is redu...

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Bibliographic Details
Published in:Microelectronics 2014-06, Vol.45 (6), p.574-577
Main Authors: Suveetha Dhanaselvam, P., Balamurugan, N.B.
Format: Article
Language:English
Subjects:
Approximation
Computer simulation
Deterioration
Gates
Halos
Mathematical analysis
MOSFETs
Short channel effects
Subthreshold current
Threshold voltage
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Summary:In the proposed work analytical modeling of single halo triple material surrounding gate (SH-TMSG) MOSFET is developed. The threshold voltage and subthreshold current has been derived using parabolic approximation method and the simulation results are analyzed. The threshold voltage roll off is reduced and it denotes the deterioration of short channel effects. The results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated.
ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/j.mejo.2014.03.017