SPICE model of thyristors with amplifying gate and emitter-shorts

In this work, a new SPICE model is developed for power thyristors, which contains amplifying gate and emitter-shorts. This model is based on the two-dimensional two-transistor circuit model of a thyristor. The authors use Gummel–Poon circuit model that takes into consideration the high injection eff...

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Bibliographic Details
Published in:IET power electronics 2014-03, Vol.7 (3), p.724-735
Main Authors: Zekry, Abdelhalim A, Sayah, Gihan Taha, Soliman, Fouad A
Format: Article
Language:English
Subjects:
Amplification
amplifying gate
Circuits
conductivity modulation
Emittance
emitter‐shorts
Gates (circuits)
Gummel‐Poon circuit model
injection effects
low n‐doped region
Mathematical models
model parameter extraction
Modulation
power semiconductor devices
power thyristors
semiconductor device models
semiconductor doping
SPICE
SPICE model
Spices
Thyristors
two‐dimensional two‐transistor circuit model
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Summary:In this work, a new SPICE model is developed for power thyristors, which contains amplifying gate and emitter-shorts. This model is based on the two-dimensional two-transistor circuit model of a thyristor. The authors use Gummel–Poon circuit model that takes into consideration the high injection effects and the conductivity modulation of the low n-doped region. The model parameters are defined and extracted according to a new methodology. The simulation results are compared with experimental measurements. It has been found that the developed model satisfactorily describes the performance of the thyristor under practical operating conditions.
ISSN:1755-4535
1755-4543
1755-4543
DOI:10.1049/iet-pel.2013.0158