Fabrication of La1−xSrxMnO3 thin films by chemical solution deposition for high-temperature resistive materials

Epitaxial thin films of heavily doped perovskite manganite (La1−xSrxMnO3 or LSMO with x ≥ 0.5) were successfully fabricated onto SrTiO3(001) single crystal substrates by chemical solution deposition. The electrical resistivity and the Hall coefficient were measured from 200 to 673 K. The temperature...

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Bibliographic Details
Published in:Journal of the Ceramic Society of Japan 2014/06/01, Vol.122(1426), pp.415-420
Main Authors: SHINODA, Kentaro, NAKAJIMA, Tomohiko, TSUCHIYA, Tetsuo
Format: Article
Language:English
Subjects:
Ceramics
Coefficients
Deposition
Electronics
LSMO
Manganites
MOD
Resistive materials
SiC power electronics
Silicon carbide
Stability tests
Thin films
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Summary:Epitaxial thin films of heavily doped perovskite manganite (La1−xSrxMnO3 or LSMO with x ≥ 0.5) were successfully fabricated onto SrTiO3(001) single crystal substrates by chemical solution deposition. The electrical resistivity and the Hall coefficient were measured from 200 to 673 K. The temperature coefficient of resistance reached a minimum at 0.6 ≤ x ≤ 0.7. A high-temperature stability test showed that the LSMO thin films could be used up to 673 K. This study has shown that LSMO thin films are good candidates as high-temperature resistive materials that can be used in SiC power electronics.
ISSN:1882-0743
1348-6535
DOI:10.2109/jcersj2.122.415