Resolution properties of reflection-mode exponential-doping GaAs photocathodes

Resolution properties of reflection-mode exponential-doping and uniform-doping GaAs photocathodes were calculated and comparatively analyzed by using the modulation transfer function obtained by establishing and solving the two-dimensional continuity equation. The calculated results show that compar...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2014-08, Vol.24, p.215-219
Main Authors: Wang, Honggang, Qian, Yunsheng, Du, Yujie, Chen, Xinlong, Liu, Jian, Chang, Benkang
Format: Article
Language:English
Subjects:
Applied sciences
Diffusion
Electronics
Exact sciences and technology
Exponential doping
Gallium arsenide
Gallium arsenides
Mathematical analysis
Modulation transfer function
Optoelectronic devices
Photocathodes
Quantum efficiency
Reflection-mode GaAs
Resolution
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
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Summary:Resolution properties of reflection-mode exponential-doping and uniform-doping GaAs photocathodes were calculated and comparatively analyzed by using the modulation transfer function obtained by establishing and solving the two-dimensional continuity equation. The calculated results show that compared with the uniform-doping GaAs photocathode, the exponential-doping structure can improve significantly not only the resolution, but also the quantum efficiency of the photocathode. This improvement differs from the approach for achieving high resolution by reducing the emitting layer thickness Te and the electron diffusion length LD or by increasing the recombination velocity of back-interface SV, which results in low quantum efficiency. Furthermore, the improvement of resolution and quantum efficiency of the reflection-mode exponential-doping GaAs photocathode is due the effect of the built-in electric field on electron transport and on lateral diffusion.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2014.03.006