Unipolar resistive switching properties of amorphous Pr sub(0.7)Ca sub(0.3)MnO sub(3) films grown on a Pt/Ti/SiO sub(2)/Si substrate

Amorphous Pr sub(0.7)Ca sub(0.3)MnO sub(3) (APCMO) films were grown on a Pt/Ti/SiO sub(2)/Si (Pt-Si) substrate at temperatures below 500 degree C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si de...

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Bibliographic Details
Published in:Current applied physics 2014-04, Vol.14 (4), p.538-542
Main Authors: Seong, Tae-Geun, Lee, Beom-Seok, Choi, Kyu Bum, Kweon, Sang-Hyo, Kim, Beom Yong, Jung, Kyooho, Moon, Ji Won, Lee, Kee Jeong, Hong, Kwon, Nahm, Sahn
Format: Article
Language:English
Subjects:
Devices
Emission
Filaments
Platinum
Silicon dioxide
Silicon substrates
Switching
Titanium
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Summary:Amorphous Pr sub(0.7)Ca sub(0.3)MnO sub(3) (APCMO) films were grown on a Pt/Ti/SiO sub(2)/Si (Pt-Si) substrate at temperatures below 500 degree C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.
ISSN:1567-1739
DOI:10.1016/j.cap.2014.01.012