Ion beam fluence induced variation in optical band-gap of ZnO nanowires

The phenomenon of band-gap engineering of ZnO inserts new platforms to its application base. A similar effort of engineering the optical band-gap of ZnO by ion beam irradiation has been put forwards via this study. We synthesised ZnO nanowires using polycarbonate track-etched membranes as templates....

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Bibliographic Details
Published in:Journal of experimental nanoscience 2014-01, Vol.9 (8), p.871-876
Main Authors: Chauhan, R.P., Gehlawat, Devender, Kaur, Amandeep
Format: Article
Language:English
Subjects:
absorption spectra
Fluence
Inserts
ion beam
Ion beams
Nanostructure
Nanowires
Platforms
Polycarbonates
Tauc plot
template synthesis
Zinc oxide
ZnO nanowires
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Summary:The phenomenon of band-gap engineering of ZnO inserts new platforms to its application base. A similar effort of engineering the optical band-gap of ZnO by ion beam irradiation has been put forwards via this study. We synthesised ZnO nanowires using polycarbonate track-etched membranes as templates. The effect of 50 MeV Li 3+ ion beam (different fluence) on the band-gap of synthesised ZnO nanowires have been studied from Tauc plot and the decrease in the optical band-gap with increase in the radiation fluence has been observed.
ISSN:1745-8080
1745-8099
DOI:10.1080/17458080.2012.736639