Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics

• Published in: Solid-state electronics 2014-08, Vol.98, p.32-37
• Main Authors: Knoll, L., Richter, S., Nichau, A., Trellenkamp, S., Schäfer, A., Wirths, S., Blaeser, S., Buca, D., Bourdelle, K.K., Zhao, Q.-T., Mantl, S.
• Format: Article
• Language: English
• Subjects: Applied sciences; Arrays; Circuit properties; Devices; Electric, optical and optoelectronic circuits; Electronic circuits; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Inverter; Molecular electronics, nanoelectronics; Nanostructure; Segregations; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Strained Si nanowire; Subthreshold slope; Switching, multiplexing, switched capacity circuits; Transistors; Tunnel-FET; Tunneling; Ultralow power electronics
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2014.04.006

Electrical characteristics of silicon nanowire tunnel field effect transistors (TFETs) are presented and benchmarked versus other concepts. Particular emphasis is placed on the band to band tunneling (BTBT) junctions, the functional core of the device. Dopant segregation from ion implanted ultrathin silicide contacts is proved as a viable method to achieve steep tunneling junctions. This reduces defect generation by direct implantation into the junction and thus minimizes the risk of trap assisted tunneling. The method is applied to strained silicon, specifically to nanowire array transistors, enabling the realization of n-type and p-type TFETs with fairly high currents and complementary TFET inverters with sharp transitions and good static gain, even at very low drain voltages of VDD=0.2V. These achievements suggest a considerable potential of TFETs for ultralow power applications. Gate-all-around Si nanowire array p-type TFETs have been fabricated to demonstrate the impact of electrostatic control on the device performance. A high on-current of 78μA/μm at VD=VG=1.1V is obtained.