Photo-Insensitive Amorphous Oxide Thin-Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics

A novel amorphous‐indium‐gallium‐zinc‐oxide‐based application with stable switching characteristics under negative bias illumination is shown. Metallic nanohole‐based plasmonic filters are used for tuning the spectrum of the ambient light source, and the photosensitivity of the a‐IGZO‐TFT is investi...

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Bibliographic Details
Published in:Advanced functional materials 2014-06, Vol.24 (23), p.3482-3487
Main Authors: Chang, Seongpil, Do, Yun Seon, Kim, Jong-Woo, Hwang, Bo Yeon, Choi, Jinnil, Choi, Byung-Hyun, Lee, Yun-Hi, Choi, Kyung Cheol, Ju, Byeong-Kwon
Format: Article
Language:English
Subjects:
amorphous oxides
Bias
Illumination
negative bias illumination stress
Oxides
plasmonic filters
Plasmonics
Semiconductor devices
semiconductors
Spectra
Thin films
Transistors
transparent electronics
Tuning
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Summary:A novel amorphous‐indium‐gallium‐zinc‐oxide‐based application with stable switching characteristics under negative bias illumination is shown. Metallic nanohole‐based plasmonic filters are used for tuning the spectrum of the ambient light source, and the photosensitivity of the a‐IGZO‐TFT is investigated within a selectively controlled spectral range. The suggested thin‐film transistors show greatly improved stability even in a negative bias illumination stress environment.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201304114