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Asymmetry of Magnetization Reversal of Pinned Layer in NiFe/Cu/NiFe/IrMn Spin-Valve Structure

Two types of asymmetry in giant magnetoresistance (GMR) are observed which are not related to a training effect, but indicate different mechanisms of magnetization reversal of the pinned layer in spin-valve (SV) structures for ascending and descending field scans. GMR, exchange bias and coercivity i...

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Bibliographic Details
Published in:Journal of superconductivity and novel magnetism 2014-06, Vol.27 (6), p.1547-1552
Main Authors: Chechenin, N. G., Chernykh, P. N., Dushenko, S. A., Dzhun, I. O., Goikhman, A. Y., Rodionova, V. V.
Format: Article
Language:English
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Summary:Two types of asymmetry in giant magnetoresistance (GMR) are observed which are not related to a training effect, but indicate different mechanisms of magnetization reversal of the pinned layer in spin-valve (SV) structures for ascending and descending field scans. GMR, exchange bias and coercivity in Si/Ta/NiFe/Cu/NiFe/IrMn/Ta SV-structures were investigated as functions of the thickness of the nonmagnetic spacer. The spacer thickness effects are discussed in correlation with layers microstructure and interfaces morphology variations.
ISSN:1557-1939
1557-1947
DOI:10.1007/s10948-013-2473-0