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An X-band substrate integrated waveguide attenuator
ABSTRACT An X‐band substrate integrated waveguide (SIW) attenuator is presented for the first time. To gain the desired attenuation level, a resistive π‐network was structured using standard surface‐mount device resistors while retaining a predefined mode transition and impedance matching condition....
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Published in: | Microwave and optical technology letters 2014-10, Vol.56 (10), p.2446-2449 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | ABSTRACT
An X‐band substrate integrated waveguide (SIW) attenuator is presented for the first time. To gain the desired attenuation level, a resistive π‐network was structured using standard surface‐mount device resistors while retaining a predefined mode transition and impedance matching condition. The attenuator prototype features the measure of attenuation level (−1, −3, and −5dB) across 8.04–11.12 GHz frequency range. The attenuator may contribute to design of a genuine SIW circuit. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2446–2449, 2014 |
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ISSN: | 0895-2477 1098-2760 |
DOI: | 10.1002/mop.28607 |