An AlGaAs/GaAs-based planar Gunn diode oscillator with a fundamental frequency operation of 120 GHz

ABSTRACT This letter reports the highest fundamental oscillator operating frequency of 120 GHz for gallium arsenide (GaAs)‐based Gunn diode. The letter describes the design, fabrication, and test of the aluminum gallium arsenide (AlGaAs)/(GaAs) planar Gunn diode with an anode to cathode separation o...

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Bibliographic Details
Published in:Microwave and optical technology letters 2014-10, Vol.56 (10), p.2449-2451
Main Authors: Maricar, Mohamed Ismaeel, Glover, James, Khalid, Ata, Li, Chong, Evans, Gwynne, Cumming, David S. R., Oxley, Christopher H.
Format: Article
Language:English
Subjects:
Aluminum gallium arsenides
Channels
coplanar waveguide
Coplanar waveguides
GaAs substrate
Gallium arsenide
Gunn diodes
Microwaves
oscillation frequency
Oscillators
planar Gunn diode
power
Resonant frequency
series inductor
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Summary:ABSTRACT This letter reports the highest fundamental oscillator operating frequency of 120 GHz for gallium arsenide (GaAs)‐based Gunn diode. The letter describes the design, fabrication, and test of the aluminum gallium arsenide (AlGaAs)/(GaAs) planar Gunn diode with an anode to cathode separation of 1 μm and channel width of 120 μm. The planar Gunn diode was designed with an integrated series inductor in coplanar waveguide format. The experimental results showed that the planar Gunn diode oscillated at a fundamental frequency of 120.47 GHz with an RF output power −9.14 dBm. This is highest fundamental frequency and power recorded for a GaAs‐based Gunn diode. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2449–2451, 2014
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.28606