Analytical Modeling of Electric Field Distribution in Dual Material Junctionless Surrounding Gate MOSFETs

In this paper, an electric field distribution of the junctionless dual material surrounding gate MOSFETs (JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction based devices, but junctionless has a positive flatband voltage with zero electric field. In surroun...

Full description

Saved in:
Bibliographic Details
Published in:International journal of VLSI design & communication systems 2014-06, Vol.5 (3), p.83-92
Main Authors: Dhanaselvam, P. Suveetha, Ananthi, A. Nithya
Format: Article
Language:English
Subjects:
Channels
Devices
Electric fields
Electric potential
Electrical junctions
Gates
MOSFETs
Voltage
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, an electric field distribution of the junctionless dual material surrounding gate MOSFETs (JLDMSG) is developed. Junctionless is a device that has similar characteristics like junction based devices, but junctionless has a positive flatband voltage with zero electric field. In surrounding gate MOSFETs, gate material surrounds the channel in all direction , therefore it can overcome the short channel effects effectively than other devices. In this paper, surface potential and electric field distribution is modelled. The proposed surface potential model is compared with the existing central potential model. It is observed that the short channel effects (SCE) is reduced and the performance is better than the existing method.
ISSN:0976-1527
0976-1357
DOI:10.5121/vlsic.2014.5308