Improved AlGaN p-i-n Photodetectors for Monitoring of Ultraviolet Radiation

Improved aluminum-gallium-nitride (Al x Ga 1-x N) p-i-n photodetectors with different active regions are reported, designed for the measurement of UV-A (315 to 380 nm), UV-B (280 to 315 nm), and UV-C (

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2014-11, Vol.20 (6), p.166-172
Main Authors: Albrecht, Bjorn, Kopta, Susanne, John, Oliver, Rutters, Martin, Kunzer, Michael, Driad, Rachid, Marenco, Norman, Kohler, Klaus, Walther, Martin, Ambacher, Oliver
Format: Article
Language:English
Subjects:
Aluminum
Current measurement
Dark current
Density
Irradiance
Lighting
Monitoring
Photoconductivity
Photocurrent
Photodetectors
Photoelectric effect
PIN photodiodes
Temperature measurement
Ultraviolet
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Description
Summary:Improved aluminum-gallium-nitride (Al x Ga 1-x N) p-i-n photodetectors with different active regions are reported, designed for the measurement of UV-A (315 to 380 nm), UV-B (280 to 315 nm), and UV-C (
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2014.2326251