Highly sensitive and multispectral responsive phototransistor using tungsten-doped VO sub(2) nanowires

In this work, we report a novel and feasible strategy for the practical applications of one-dimensional ultrasensitive phototransistors made of tungsten-doped VO sub(2) single nanowires. The photoconductive response of the single nanowire device was investigated under different visible light excitat...

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Bibliographic Details
Published in:Nanoscale 2014-06, Vol.6 (13), p.7619-7627
Main Authors: Lu, Junpeng, Liu, Hongwei, Deng, Suzi, Zheng, Minrui, Wang, Yinghui, van Kan, Jeroen A, Tang, Sing Hai, Zhang, Xinhai, Sow, Chorng Haur, Mhaisalkar, Subodh G
Format: Article
Language:English
Subjects:
Devices
Nanostructure
Nanowires
Optical switching
Optoelectronic devices
Phototransistors
Strategy
Vanadium oxides
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Summary:In this work, we report a novel and feasible strategy for the practical applications of one-dimensional ultrasensitive phototransistors made of tungsten-doped VO sub(2) single nanowires. The photoconductive response of the single nanowire device was investigated under different visible light excitations (405 nm, 532 nm, and 660 nm). The phototransistor device exhibited ultrafast photoresponse, high responsivity, broad multispectral response, and rapid saturation characteristic curves. These promising results help to promote the applications of this material in nano-scale optoelectronic devices such as efficient multispectral phototransistors and optical switches.
ISSN:2040-3364
2040-3372
DOI:10.1039/c4nr00898g