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Insulated gate bipolar transistor reliability testing protocol for PV inverter applications
ABSTRACT To decrease the cost of ownership of photovoltaic systems, less costly and more reliable photovoltaic inverters must be developed. Insulated gate bipolar transistors are a significant cause of inverter failures and system inefficiencies, so a thorough understanding of their strengths and we...
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Published in: | Progress in photovoltaics 2014-09, Vol.22 (9), p.970-983 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | ABSTRACT
To decrease the cost of ownership of photovoltaic systems, less costly and more reliable photovoltaic inverters must be developed. Insulated gate bipolar transistors are a significant cause of inverter failures and system inefficiencies, so a thorough understanding of their strengths and weaknesses with regards to inverters is necessary. This paper summarizes the current state of experimentation surrounding the use of IGBTs in photovoltaic inverters and discusses their construction, use, lifetime, and reliability of IGBTs regularly used in photovoltaic inverters. Published 2013. This article is a U.S. Government work and is in the public domain in the USA.
To decrease cost of ownership of photovoltaic systems, less costly and more reliable photovoltaic inverters must be developed. Insulated gate bipolar transistors (IGBTs) are a significant cause of inverter failures and system inefficiencies, so a thorough understanding of their strengths and weaknesses with regards to inverters is necessary. This paper summarizes the current state of experimentation surrounding the use of IGBTs in photovoltaic inverters and discusses the construction, use, lifetime, and reliability of IGBTs regularly used in photovoltaic inverters. |
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ISSN: | 1062-7995 1099-159X |
DOI: | 10.1002/pip.2351 |