Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films

Thermal ALD deposited Al 2 O 3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the lo...

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Bibliographic Details
Published in:Physical chemistry chemical physics : PCCP 2014-10, Vol.16 (39), p.2184-21811
Main Authors: Vandana, Batra, Neha, Gope, Jhuma, Singh, Rajbir, Panigrahi, Jagannath, Tyagi, Sanjay, Pathi, P, Srivastava, S. K, Rauthan, C. M. S, Singh, P. K
Format: Article
Language:English
Subjects:
Aluminum oxide
Annealing
Budgeting
Density
Deposition
Management information systems
Passivation
Silicon
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Summary:Thermal ALD deposited Al 2 O 3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV
ISSN:1463-9076
1463-9084
DOI:10.1039/c4cp03430a