Unified analytical treatment for the current flow due to tunneling of electrons from metal into semiconductor

By the use of binomial expansion theorem the analytical treatments for the current flow due to tunneling of electron from the metal into the semiconductor are established. The obtained formulas can be useful in the analytical evaluation of the current density from the semiconductors to the metals. T...

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Published in:Journal of computational electronics 2014-06, Vol.13 (2), p.370-374
Main Authors: Saygi, S., Mamedov, B. A.
Format: Article
Language:English
Subjects:
Approximation
Binomials
Computational efficiency
Computing time
Electrical Engineering
Electrons
Engineering
Mathematical analysis
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mathematical models
Mechanical Engineering
Optical and Electronic Materials
Semiconductors
Theoretical
Tunneling
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description By the use of binomial expansion theorem the analytical treatments for the current flow due to tunneling of electron from the metal into the semiconductor are established. The obtained formulas can be useful in the analytical evaluation of the current density from the semiconductors to the metals. The method is general and easy for application. Numerical tests show that the obtained formulas provide higher accuracy and efficiency than the approximation methods in literature. The usefulness of the suggested method is confirmed by the concrete example.
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subjects Approximation
Binomials
Computational efficiency
Computing time
Electrical Engineering
Electrons
Engineering
Mathematical analysis
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mathematical models
Mechanical Engineering
Optical and Electronic Materials
Semiconductors
Theoretical
Tunneling
title Unified analytical treatment for the current flow due to tunneling of electrons from metal into semiconductor
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