Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures

In this work, electrical characterization of the current-voltage and capacitance-voltage curves for the Metal/InN/InP Schottky structures are investigated. We have studied electrically thin InN films realized by the nitridation of InP (100) substrates using a Glow Discharge Source (GDS) in ultra hig...

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Bibliographic Details
Published in:Sensors & transducers 2014-05, Vol.27 (5), p.9-9
Main Authors: Ameur, K, Benamara, Z, Mazari, H, Benseddik, N, Khelifi, R, Mostefaoui, M, Benamara, M A, Gruzza, B, Bluet, J M, Bru-Chevallier, C
Format: Article
Language:English
Subjects:
Behavior
Capacitance
Channels
Defects
Diodes
Electric potential
Electron gas
Indium phosphides
Mathematical models
Measuring instruments
Mercury (metal)
Transducers
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Summary:In this work, electrical characterization of the current-voltage and capacitance-voltage curves for the Metal/InN/InP Schottky structures are investigated. We have studied electrically thin InN films realized by the nitridation of InP (100) substrates using a Glow Discharge Source (GDS) in ultra high vacuum. The I (V) curves have exhibited anomalous two-step (kink) forward bias behaviour; a suitable fit was only obtained by using a model of two discrete diodes in parallel. Thus, we have calculated, using I(V) and C(V) curves of Hg/InN/InP Schottky structures, the ideality factor n, the saturation current I^sub s^, the barrier height [straight phi]^sub B^, the series resistance R^sub s^, the doping concentration N^sub d^ and the diffusion voltage V^sub d^. We have also presented the band diagram of this heterojunction which indicates the presence of a channel formed by holes at the interface InN/InP which explain by the presence of two-dimensional electron gas (2-DEG) and this was noticed in the presentation of characteristics C(V).
ISSN:2306-8515
1726-5479