Large magnetoresistance in a permalloy/Ba sub(2)FeMoO sub(6) sputtered film

We observed a large magnetoresistance (MR) in a permalloy/Ba sub(2)FeMoO sub(6) bi-layer film when compared with a Ba sub(2)FeMoO sub(6) film made by room temperature sputtering and high temperature synthesis where the MR reached ~-17% at 10 K and ~-8% at 300 K and 8 T. Our results are consistent wi...

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Published in:Physica. B, Condensed matter Condensed matter, 2014-03, Vol.436, p.126-129
Main Authors: McCann, D M, Williams, GVM, Hyndman, A, Stephen, J, Kennedy, J
Format: Article
Language:English
Subjects:
Condensed matter
Devices
Magnetoresistance
Magnetoresistivity
Permalloy
Sputtered films
Sputtering
Synthesis
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container_title Physica. B, Condensed matter
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creator McCann, D M
Williams, GVM
Hyndman, A
Stephen, J
Kennedy, J
description We observed a large magnetoresistance (MR) in a permalloy/Ba sub(2)FeMoO sub(6) bi-layer film when compared with a Ba sub(2)FeMoO sub(6) film made by room temperature sputtering and high temperature synthesis where the MR reached ~-17% at 10 K and ~-8% at 300 K and 8 T. Our results are consistent with the MR in the bi-layer film being dominated by spin-tunneling across the interface between the two layers. The bi-layer film has a nearly linear MR at 300 K and 330 K and at high fields that may prove useful for magnetic sensor devices.
doi_str_mv 10.1016/j.physb.2013.12.008
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subjects Condensed matter
Devices
Magnetoresistance
Magnetoresistivity
Permalloy
Sputtered films
Sputtering
Synthesis
title Large magnetoresistance in a permalloy/Ba sub(2)FeMoO sub(6) sputtered film
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