Correlation between barrier inhomogeneities of 4H-SiC 1 A/600 V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS

Electrical properties of commercial silicon carbide (SiC) Schottky rectifiers are investigated through the measurement and analysis of the forward current-voltage (I-V) and reverse capacitance-voltage (C-V) characteristics in a large temperature range. Some of devices show distinct discrepancies in...

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Bibliographic Details
Published in:Solid-state electronics 2014-09, Vol.99, p.1-6
Main Authors: GELCZUK, Ł, KAMYCZEK, P, PŁACZEK-POPKO, E, DABROWSKA-SZATA, M
Format: Article
Language:English
Subjects:
Activation energy
Applied sciences
Barriers
Correlation
Defects
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Inhomogeneities
Rectifiers
Silicon carbide
Volt-ampere characteristics
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Summary:Electrical properties of commercial silicon carbide (SiC) Schottky rectifiers are investigated through the measurement and analysis of the forward current-voltage (I-V) and reverse capacitance-voltage (C-V) characteristics in a large temperature range. Some of devices show distinct discrepancies in specific ranges of their electrical characteristics, especially the excess current dominates at voltage
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2014.04.043