Site-selectively fabricated phthalocyanine neutral radical nanocrystals: structure and electrical properties

Phthalocyanine neutral radical nanocrystals were site-selectively synthesized by nanoscale electrocrystallization. These nanocrystals were found to have a three-dimensional pi - pi stacking structure. In addition, a bottom-gate-type field-effect transistor (FET) structure could be readily fabricated...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2013-01, Vol.1 (47), p.7890-7895
Main Author: Hasegawa, Hiroyuki
Format: Article
Language:English
Subjects:
Crystals
Drains
Electrical properties
Electrodes
Nanocrystals
Nanostructure
Radicals
Three dimensional
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Summary:Phthalocyanine neutral radical nanocrystals were site-selectively synthesized by nanoscale electrocrystallization. These nanocrystals were found to have a three-dimensional pi - pi stacking structure. In addition, a bottom-gate-type field-effect transistor (FET) structure could be readily fabricated by reusing two electrochemical electrodes employed during the electrocrystallization process as the source and drain electrodes. We found that the nanocrystals exhibited properties similar to that of a weak p-type material. The weakened Mott-insulating nature of the nanocrystals, owing to the three-dimensional pi - pi interactions, may mitigate the field effect in the crystals. We believe that nanoscale electrocrystallization can also be applied to obtain crystals of various organic molecules and that further enhancements of this method will lead to the development of environmentally friendly, next-generation nanofabrication processes.
ISSN:2050-7526
2050-7534
DOI:10.1039/c3tc31690d