Ultra low thermal conductivity of disordered layered p-type bismuth telluride

Disordered layered p-type bismuth telluride was obtained by high pressure (1 GPa) and high strain deformation along the c-axis direction of commercially available single crystals. After initial deformation the p-type bismuth telluride flakes were subsequently fully densified by cold pressing (800 MP...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2013-01, Vol.1 (12), p.2362-2367
Main Authors: Grasso, Salvatore, Tsujii, Naohito, Jiang, Qinghui, Khaliq, Jibran, Maruyama, Satofumi, Miranda, Miriam, Simpson, Kevin, Mori, Takao, Reece, Michael J.
Format: Article
Language:English
Subjects:
Bismuth
Bismuth tellurides
Cold pressing
Deformation
Heat transfer
Plastic deformation
Thermal conductivity
Thermoelectricity
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Summary:Disordered layered p-type bismuth telluride was obtained by high pressure (1 GPa) and high strain deformation along the c-axis direction of commercially available single crystals. After initial deformation the p-type bismuth telluride flakes were subsequently fully densified by cold pressing (800 MPa at room temperature). As a result of the severe plastic deformation, the samples showed highly anisotropic electrical and thermal conductivities. In particular, the thermal conductivity measured along the pressing direction was as low as 0.34 W m super(-1) K super(-1), which is one of the lowest values reported for fully dense p-type bismuth telluride. The full set of thermoelectric properties of the disordered bismuth antimony telluride is critically discussed.
ISSN:2050-7526
2050-7534
DOI:10.1039/c3tc30152d