Improved performance in TIPS-pentacene field effect transistors using solvent additives

• Published in: Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2013-01, Vol.1 (27), p.4216-4221
• Main Authors: Chae, Gil Jo, Jeong, Seung-Hyeon, Baek, Jeong Hoon, Walker, Bright, Song, Chung Kun, Seo, Jung Hwa
• Format: Article
• Language: English
• Subjects: Additives; Devices; Field effect transistors; Performance enhancement; Scanning electron microscopy; Semiconductor devices; Solvents
• ISSN: 2050-7526; 2050-7534
• DOI: 10.1039/c3tc30506f

The effect of solvent additives on the performance of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) field effect transistors (FETs) was investigated. Hole mobilities increased from 0.10 cm super(2) V super(-1) s super(-1) for pristine devices to 0.73 or 0.71 cm super(2) V super(-1) s super(-1), when TIPS-pentacene FETs were processed with diphenyl ether (DPE) or chloronaphthalene (CN), respectively. In order to examine the impact of additives on the surface morphology, molecular ordering and crystallinity of TIPS-pentacene, scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical microscopy measurements were carried out. Appropriate amounts of additives were found to induce the formation of well-ordered crystalline domains in TIPS-pentacene films, resulting in enhanced hole transport as well as consistent device performance. Additionally, reduced contact resistances were observed in devices processed with additives compared to neat TIPS-pentacene FET devices. Our findings indicate that the use of solvent additives constitutes a new and effective methodology for the fabrication of OFETs with improved performance.