Microstructural defect properties of InGaN/GaN blue light emitting diode structures

• Published in: Journal of materials science. Materials in electronics 2014-09, Vol.25 (9), p.3924-3932
• Main Authors: Baş, Y., Demirel, P., Akın, N., Başköse, C., Özen, Y., Kınacı, B., Öztürk, M. K., Özçelik, S., Özbay, E.
• Format: Article
• Language: English
• Subjects: Atomic force microscopy; Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystal defects; Fourier transforms; Gallium nitrides; Indium gallium nitrides; Infrared spectroscopy; Light-emitting diodes; Materials Science; Optical and Electronic Materials; Volt-ampere characteristics
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-014-2108-7

In this paper, we study structural and morphological properties of metal-organic chemical vapour deposition-grown InGaN/GaN light emitting diode (LED) structures with different indium (In) content by means of high-resolution X-ray diffraction, atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL) and current–voltage characteristic (I–V). We have found out that the tilt and twist angles, lateral and vertical coherence lengths of mosaic blocks, grain size, screw and edge dislocation densities of GaN and InGaN layers, and surface roughness monotonically vary with In content. Mosaic defects obtained due to temperature using reciprocal lattice space map has revealed optimized growth temperature for active InGaN layer of MQW LED. It has been observed in this growth temperature that according to AFM result, LED structure has high crystal dimension, and is rough whereas according to PL and FTIR results, bandgap energy shifted to blue, and energy peak half-width decreased at high values. According to I–V measurements, it was observed that LED reacted against light at optimized temperature. In conclusion, we have seen that InGaN MQW structure’s structural, optical and electrical results supported one another.