Single crystal Gd sub(2)O sub(3) epitaxially on GaAs(111)A

Gd sub(2)O sub(3) films 2 and 6 nm thick, electron-beam evaporated from a compact powder target, were deposited on freshly molecular beam epitaxy (MBE) grown epi-GaAs(111)A in a multi-chamber MBE system. The oxide films are epitaxial with the underlying GaAs, as studied by in situreflective high ene...

Full description

Saved in:
Bibliographic Details
Published in:CrystEngComm 2014-08, Vol.16 (36), p.8457-8462
Main Authors: Chiang, Tsung-Hung, Wu, Shao-Yun, Huang, Tsung-Shiew, Hsu, Chia-Hung, Kwo, Jueinai, Hong, Minghwei
Format: Article
Language:English
Subjects:
Diffraction
Epitaxy
Gallium arsenide
Gallium arsenides
Molecular beam epitaxy
Molecular structure
Orientation relationships
Synchrotron radiation
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Gd sub(2)O sub(3) films 2 and 6 nm thick, electron-beam evaporated from a compact powder target, were deposited on freshly molecular beam epitaxy (MBE) grown epi-GaAs(111)A in a multi-chamber MBE system. The oxide films are epitaxial with the underlying GaAs, as studied by in situreflective high energy electron diffraction and high-resolution X-ray diffraction using synchrotron radiation. The films undergo a structure phase transformation from hexagonal to monoclinic when the film thickness increases from 2 to 6 nm; the 2 nm oxide has H-Gd sub(2)O sub(3)(0001)[101&cmb.macr; 0][Verbar]GaAs(111)[42&cmb.macr; 2&cmb.mac r; ] orientation relationship and the 6 nm film follows M-Gd sub(2)O sub(3)(2&cmb. macr; 01)[102][Verbar]GaAs(111) with 3 rotational variants anchored by the 3-fold symmetric substrate. Here, H and M denote the hexagonal and monoclinic phases, respectively.
ISSN:1466-8033
DOI:10.1039/c4ce00734d