Loading…

Electroluminescence enhancement in InGaN light-emitting diode during the electrical stressing process

This study of the optoelectronic properties of blue light-emitting diodes under direct current stress. It is found that the electroluminescence intensity increases with duration of stress, and the efficiency droop curves illustrated that the peak-efficiency and the peak-efficiency-current increases...

Full description

Saved in:
Bibliographic Details
Published in:Optics express 2014-08, Vol.22 Suppl 5, p.A1328-A1333
Main Authors: Chen, T T, Wang, C P, Fu, H K, Chou, P T, Ying, S-P
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This study of the optoelectronic properties of blue light-emitting diodes under direct current stress. It is found that the electroluminescence intensity increases with duration of stress, and the efficiency droop curves illustrated that the peak-efficiency and the peak-efficiency-current increases and decreases, respectively. We hypothesize that these behaviors mainly result from the increased internal quantum efficiency.
ISSN:1094-4087
DOI:10.1364/OE.22.0A1328