Power divider with bandwidth from 14 to 82 GHz in CMOS IC technology

An on-chip power divider with an extremely wide bandwidth is presented. The power divider was implemented in a TSMC 180 nm RF CMOS process. Measurements showed an absolute bandwidth of 68 GHz from 14 to 82 GHz with a matching condition of

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Bibliographic Details
Published in:Electronics letters 2014-07, Vol.50 (14), p.1007-1009
Main Authors: Dang, Trung-Sinh, Lee, Bomson, Yoon, Sang-Woong
Format: Article
Language:English
Subjects:
Applied sciences
Bandwidth
bandwidth 14 GHz to 82 GHz
Circuit properties
CMOS
CMOS IC technology
CMOS integrated circuits
coupled circuits
coupled line
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Insertion loss
Integrated circuits
Joining
loss 2.8 dB to 10.5 dB
Matching
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
microwave integrated circuits
Microwave technology
millimetre wave integrated circuits
Noise levels
on‐chip power divider
Power dividers
size 180 nm
TSMC RF CMOS process
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Description
Summary:An on-chip power divider with an extremely wide bandwidth is presented. The power divider was implemented in a TSMC 180 nm RF CMOS process. Measurements showed an absolute bandwidth of 68 GHz from 14 to 82 GHz with a matching condition of
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2014.0528