Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers

Dislocation behaviors are analyzed in AlGaN/GaN multiple-quantum-well films grown with different strain-modified interlayers. In the case of multiple-quantum-well layers grown on a GaN buffer layer without the interlayer, many threading dislocations interact and annihilate within about 100nm below t...

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Bibliographic Details
Published in:Chinese physics letters 2012-09, Vol.29 (9), p.96101-1-096101-4
Main Authors: Sun, He-Hui, Guo, Feng-Yun, Li, Deng-Yue, Wang, Lu, Zhao, De-Gang, Zhao, Lian-Cheng
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Buffer layers
Density
Dislocations
Gallium nitrides
Interlayers
Quantum wells
Threading dislocations
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Summary:Dislocation behaviors are analyzed in AlGaN/GaN multiple-quantum-well films grown with different strain-modified interlayers. In the case of multiple-quantum-well layers grown on a GaN buffer layer without the interlayer, many threading dislocations interact and annihilate within about 100nm below the multiple quantum well layer. For multiple-quantum-well layers grown with the AlGaN interlayer, misfit dislocations between the GaN buffer layer and the AlGaN interlayer enter multiple-quantum-well layers and result in an increase of threading dislocation density. Besides misfit dislocations, the edge-type dislocation is another dislocation origin attributed to the dissociation of Shockley partials bounding the stacking fault in AlN/GaN superlattices below the interlayer interface.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/29/9/096101