InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

InGaAs/GaAs strained quantum well lasers on both GaP and exact Si (001) via an epitaxial GaP/Si template are developed. Ridge lasers of length 1.2 mm and width 80 µm on GaP and GaP/Si templates show threshold current densities of 1.6 and 5.6 kA/cm2, respectively, in pulsed mode at room temperature....

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Bibliographic Details
Published in:Electronics letters 2014-08, Vol.50 (17), p.1226-1227
Main Authors: Huang, Xue, Song, Yuncheng, Masuda, Taizo, Jung, Daehwan, Lee, Minjoo
Format: Article
Language:English
Subjects:
Density
elemental semiconductors
epitaxial GaP‐Si template
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium arsenide
Gallium arsenides
gallium compounds
GaP‐Si
indium compounds
InGaAs‐GaAs
Lasers
Optics
Photonics
Physics
pulsed mode
Quantum well lasers
red shift
ridge lasers
room temperature
Semiconductor lasers
laser diodes
semiconductor quantum wells
Silicon
Silicon substrates
size 1.2 mm
size 80 mum
thermal mismatch
threshold current densities
Threshold currents
wavelength 1030 nm
wavelength 1043 nm
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Summary:InGaAs/GaAs strained quantum well lasers on both GaP and exact Si (001) via an epitaxial GaP/Si template are developed. Ridge lasers of length 1.2 mm and width 80 µm on GaP and GaP/Si templates show threshold current densities of 1.6 and 5.6 kA/cm2, respectively, in pulsed mode at room temperature. The emission wavelength of 1043 nm for lasers on GaP/Si was red shifted from 1030 nm for lasers on GaP and GaAs, due to the thermal mismatch with the Si substrate.
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2014.2077