The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of Narrow Width Devices in 0.2 μm Partially-Depleted Silicon-on-Insulator Technology

An anomalous total dose effect is observed in narrow-width devices fabricated in a 0.2 mu m partially-depleted silicon-on-insulator (SOI) technology. The previous radiation-induced narrow channel effect manifests itself with obvious threshold voltage shift after the transistors are subjected to tota...

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Bibliographic Details
Published in:Chinese physics letters 2013-08, Vol.30 (8), p.80701-1-080701-4, Article 080701
Main Authors: Huang, Hui-Xiang, Bi, Da-Wei, Peng, Chao, Zhang, Yan-Wei, Zhang, Zheng-Xuan
Format: Article
Language:English
Subjects:
Charge
Density
Devices
Ionizing radiation
Leakage current
Oxides
Threshold voltage
Trapping
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Summary:An anomalous total dose effect is observed in narrow-width devices fabricated in a 0.2 mu m partially-depleted silicon-on-insulator (SOI) technology. The previous radiation-induced narrow channel effect manifests itself with obvious threshold voltage shift after the transistors are subjected to total dose radiation in bulk technology. Nevertheless, a sharply increasing off-state leakage current dominates the total dose effects in narrow devices of this partially-depleted SOI technology instead of threshold voltage shifts. A radiation-induced positive charge trapping model is introduced to understand this phenomenon. The enhanced role of shallow-trench oxide induced by compressive mechanical stress in narrow devices is discussed in detail in terms of modification of the edge impurity density and charge trapping characteristics, which affect the total dose sensitivity.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/30/8/080701