Simple, Fast, and Cost-Effective Fabrication of Wafer-Scale Nanohole Arrays on Silicon for Antireflection

A simple, fast, and cost-effective method was developed in this paper for the high-throughput fabrication of nanohole arrays on silicon (Si), which is utilized for antireflection. Wafer-scale polystyrene (PS) monolayer colloidal crystal was developed as templates by spin-coating method. Metallic sha...

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Bibliographic Details
Published in:Journal of nanomaterials 2014-01, Vol.2014 (2014), p.1-6
Main Authors: Li, Shengyi, Wang, Haoxu, Chen, Jian, Wang, Chaoguang, Dong, Peitao, Wu, Xuezhong, Di, Di, Wang, Junfeng
Format: Article
Language:English
Subjects:
Arrays
Beads
Chromium
Efficiency
Etching
Laboratories
Light
Microscopy
Nanomaterials
Nanostructure
Polystyrene resins
Reflection
Semiconductors
Silicon
Silicon wafers
Solar energy
Wafers
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Summary:A simple, fast, and cost-effective method was developed in this paper for the high-throughput fabrication of nanohole arrays on silicon (Si), which is utilized for antireflection. Wafer-scale polystyrene (PS) monolayer colloidal crystal was developed as templates by spin-coating method. Metallic shadow mask was prepared by lifting off the oxygen etched PS beads from the deposited chromium film. Nanohole arrays were fabricated by Si dry etching. A series of nanohole arrays were fabricated with the similar diameter but with different depth. It is found that the maximum depth of the Si-hole was determined by the diameter of the Cr-mask. The antireflection ability of these Si-hole arrays was investigated. The results show that the reflection decreases with the depth of the Si-hole. The deepest Si-hole arrays show the best antireflection ability (reflection < 9%) at long wavelengths (>600 nm), which was about 28 percent of the nonpatterned silicon wafer’s reflection. The proposed method has the potential for high-throughput fabrication of patterned Si wafer, and the low reflectivity allows the application of these wafers in crystalline silicon solar cells.
ISSN:1687-4110
1687-4129
DOI:10.1155/2014/439212