Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED

In order to clarify the origin of the efficiency droop effect in InGaN based blue multiple-quantum-well (MQW) light emitting diodes (LEDs), a reasonable model is set up, taking all the possible factor (carrier delocalization, carrier leakage and Auger recombination) into account. By fitting the exte...

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Bibliographic Details
Published in:Chinese physics letters 2011-11, Vol.28 (11), p.118105-1-118105-4
Main Authors: Wang, Jia-Xing (嘉星 王), Wang, Lai (莱汪), Hao, Zhi-Biao (智彪 郝), Luo, Yi (毅罗)
Format: Article
Language:English
Subjects:
Augers
Carriers
Current carriers
Indium gallium nitrides
Injection current
Leakage
Light-emitting diodes
Origins
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Summary:In order to clarify the origin of the efficiency droop effect in InGaN based blue multiple-quantum-well (MQW) light emitting diodes (LEDs), a reasonable model is set up, taking all the possible factor (carrier delocalization, carrier leakage and Auger recombination) into account. By fitting the external quantum efficiency-injection current ([eta]-I) measurements of two LED samples, the validity of the model is demonstrated. The fit results show that the main origin of efficiency droop at a high injection current is carrier leakage. Furthermore it is also indicated that carrier delocalization plays an important role in the efficiency droop effect in those LEDs of large localization degree.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/28/11/118105