Nanopower CMOS Relaxation Oscillators With Sub-100 $\hbox{ppm}/\circ}\hbox{C}$ Temperature Coefficient

• Published in: IEEE transactions on circuits and systems. II, Express briefs Express briefs, 2014-09, Vol.61 (9), p.661-665
• Main Authors: Chiang, Yu-Hsuan, Liu, Shen-Iuan
• Format: Article
• Language: English
• Subjects: CMOS; Coefficients; Current sources; Electric potential; Mathematical analysis; Noise levels; Oscillators; Voltage
• ISSN: 1549-7747; 1558-3791
• DOI: 10.1109/TCSII.2014.2331110

A low temperature coefficient (TC) current reference and a curvature current source are realized by transistors with different gate-oxide thicknesses. These two current sources are used to realize oscillators with low TCs. These two oscillators of 1.4 MHz and 28 kHz, respectively, are fabricated in the 0.18- $\mu\hbox{m}$ CMOS process, and their areas are 0.072 and 0.16 $\hbox{mm}2}$, respectively. For the 1.4-MHz oscillator, its power is 615 nW with a supply voltage of 1.2 V. The measured average TC is 56.4 $\hbox{ppm}/\circ}\hbox{C}$ for a temperature of $-20\ \circ}\hbox{C}$ to $80\ \circ}\hbox{C}$. The calculated figures of merit (FOM1 and FOM2) are $-$131 and 103 dB, respectively. For the 28-kHz oscillator, its power is 40.2 nW with a supply voltage of 1.2 V. The measured average TC is 95.5 $\hbox{ppm}/\circ}\hbox{C}$ for a temperature of $-20\ \circ}\hbox{C}$ to $80\ \circ}\hbox{C}$. The calculated FOM2 is 92 dB.