Novel integration technique for silicon/III-V hybrid laser

• Published in: Optics express 2014-11, Vol.22 (22), p.26854-26861
• Main Authors: Dong, Po, Hu, Ting-Chen, Liow, Tsung-Yang, Chen, Young-Kai, Xie, Chongjin, Luo, Xianshu, Lo, Guo-Qiang, Kopf, Rose, Tate, Alaric
• Format: Article
• Language: English
• ISSN: 1094-4087; 1094-4087
• DOI: 10.1364/OE.22.026854

Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-cost silicon photonic integrated circuits for high-bandwidth optic communications and interconnects. While optical amplifiers and lasers are typically realized in III-V waveguide structures, it is beneficial to have an integration approach which allows flexible and efficient coupling of light between III-V gain media and silicon waveguides. In this paper, we propose and demonstrate a novel fabrication technique and associated transition structure to realize integrated lasers without the constraints of other critical processing parameters such as the starting silicon layer thicknesses. This technique employs epitaxial growth of silicon in a pre-defined trench with taper structures. We fabricate and demonstrate a long-cavity hybrid laser with a narrow linewidth of 130 kHz and an output power of 1.5 mW using the proposed technique.