Strain Distributions in Non-Polar a-Plane In sub(x)Ga sub(1-x) N Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction

By using x-ray diffraction analysis, we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane In sub(x) Ga sub(1-x)N thin films grown on r-sapphire substrates by metalorganic chemical vapour deposition. The results of the inplane grazing incidence...

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Bibliographic Details
Published in:Chinese physics letters 2013-09, Vol.30 (9), p.098102-1-098102-4
Main Authors: ZHAO, Gui-Juan, YANG, Shao-Yan, LIU, Gui-Peng, LIU, Chang-Bo, SANG, Ling, GU, Cheng-Yan, LIU, Xiang-Lin, WEI, Hong-Yuan, ZHU, Qin-Sheng, WANG, Zhan-Guo
Format: Article
Language:English
Subjects:
Compressive properties
Crystal structure
Crystals
Diffraction
Indium
Strain
Thin films
X-rays
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Summary:By using x-ray diffraction analysis, we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane In sub(x) Ga sub(1-x)N thin films grown on r-sapphire substrates by metalorganic chemical vapour deposition. The results of the inplane grazing incidence diffraction technique are analyzed and compared with a complementary out-of-plane high resolution x-ray diffraction technique. When the indium composition is low, the a-plane In sub(x) Ga sub(1-x)N layer is tensile strain in the growth direction (a-axis) and compressive strain in the two in-plane directions (m-axis and c-axis). The strain status becomes contrary when the indium composition is high. The stress in the m-axis direction [sigma] sub(yy) is larger than that in the c-axis direction [sigma]zz. Furthermore, strain in the two in-plane directions decrease and the crystal quality becomes better with the growing of the In sub(x)Ga sub(1-x)N him.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/30/9/098102